MBM29DL800BA-12 Просмотр технического описания (PDF) - Fujitsu

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Компоненты Описание

производитель

MBM29DL800BA-12

FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT

Fujitsu 

MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC = 3.3 V

+0.3 V

–0.3 V

VCC = 3.0 V

+0.6 V

–0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

MBM29DL800TA/MBM29DL800BA

-70

—

—

—

-90

-12

70

90

120

70

90

120

30

35

50

s BLOCK DIAGRAM

RY/BY

Buffer

RY/BY

V CC

V SS

Erase Voltage

Generator

DQ 0 to DQ 15

Input/Output

Buffers

WE

BYTE

RESET

CE

OE

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

STB

Data Latch

Logic

A0 to A18

A-1

STB

Y-Decoder

Low V CC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

5

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