MC100E452FNR2G Просмотр технического описания (PDF) - ON Semiconductor
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MC100E452FNR2G Datasheet PDF : 8 Pages
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MC10E452, MC100E452
Table 6. 100E SERIES NECL DC CHARACTERISTICS VCCx = 0.0 V; VEE = −5.0 V (Note 10)
−40°C
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
74 89
74
89
74
89
85 102 mA
VOH
Output HIGH Voltage
(Note 11)
−1025 −950 −880 −1025 −950 −880 −1025 −950 −880 mV
VOL
Output LOW Voltage
(Note 11)
−1810 −1705 −1620 −1810 −1745 −1620 −1810 −1740 −1620 mV
VIH
Input HIGH Voltage
(Single−Ended)
−1165 −1025 −880 −1165 −1025 −880 −1165 −1025 −880 mV
VIL
Input LOW Voltage
(Single−Ended)
−1810 −1645 −1475 −1810 −1645 −1475 −1810 −1645 −1475 mV
VBB
Output Voltage Reference
−1.38
−1.26 −1.38
−1.26 −1.38
−1.26 −1.38
−1.26 V
VIHCMR
Input HIGH Voltage Common
Mode Range
(Differential Configuration)
(Note 12)
−2.8
−0.4 −2.8
−0.4 −2.8
−0.4 V
IIH
Input HIGH Current
150
150
150
150 mA
IIL
Input LOW Current
0.5
0.3
0.5 0.25
0.5 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
10. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V.
11. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
12. VIHCMR min varies 1:1 with VEE, max varies 1:1 with VCC.
Table 7. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 13)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
fMAX
tPLH
tPHL
Maximum Toggle Frequency
1.1
1.1
1.1
GHz
Propagation Delay to Output CLK (Diff) 425 600 850 475 600 800 475 600 800 ps
CLK (SE) 375 600 900 425 600 850 425 600 850
MR 375 625 900 425 625 900 425 625 900
tS
Setup Time
D 175 −50
150 −50
150 −50
ps
tH
Hold Time
D 225 50
200 50
200 50
ps
tRR
Reset Recovery Time
750 450
700 450
700 450
tPW
Minimum Pulse Width
CLK 400
400
400
ps
MR 400
400
400
tskew
tJITTER
VPP
Within-Device Skew (Note 14)
Random Clock Jitter (RMS)
Input Voltage Swing
(Differential Configuration)
50
50
ps
< 1.0
< 1.0
< 1.0
ps
150
1000 150
1000 150
1000 mV
tr/tf
Rise/Fall Times 20−80%
250 475 725
275 475 675 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
13. 10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
14. Within-device skew is defined as identical transitions on similar paths through a device.
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