DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MC100E241FN Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MC100E241FN
ON-Semiconductor
ON Semiconductor 
MC100E241FN Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC10E241, MC100E241
100E SERIES PECL DC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V (Note 1.)
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
125 150
125 150
144 173 mA
VOH
Output HIGH Voltage (Note 2.)
3975 4050 4120 3975 4050 4120 3975 4050 4120 mV
VOL
Output LOW Voltage (Note 2.)
3190 3295 3380 3190 3255 3380 3190 3260 3380 mV
VIH
Input HIGH Voltage
3835 4050 4120 3835 4120 4120 3835 4120 4120 mV
VIL
Input LOW Voltage
3190 3300 3525 3190 3525 3525 3190 3525 3525 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5 0.3
0.5 0.25
0.5 0.2
µA
NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / –0.8 V.
2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.
100E SERIES NECL DC CHARACTERISTICS VCCx= 0.0 V; VEE= –5.0 V (Note 1.)
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
125 150
125 150
144 173 mA
VOH
Output HIGH Voltage
–1025 –950 –880 –1025 –950 –880 –1025 –950 –880 mV
VOL
Output LOW Voltage
–1810 –1705 –1620 –1810 –1745 –1620 –1810 –1740 –1620 mV
VIH
Input HIGH Voltage (Single Ended)
–1165 –950 –880 –1165 –880 –880 –1165 –880 –880 mV
VIL
Input LOW Voltage (Single Ended)
–1810 –1700 –1475 –1810 –1475 –1475 –1810 –1475 –1475 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5 0.3
0.5 0.25
0.5 0.2
µA
NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / –0.8 V.
2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.
AC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V or VCCx= 0.0 V; VEE= –5.0 V (Note 1.)
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
fMAX
fSHIFT
tPLH
tPHL
Maximum Toggle Frequency
Max. Shift Frequency
Propagation Delay to Output
TBD
TBD
TBD
GHz
700 900
700 900
700 900
MHz
ps
Clk 625 750 975 625 750 975 625 750 975
MR 600 725 975 600 725 975 600 725 975
ts
Setup Time
ps
D 175 25
175 25
175 25
SEL0 (SHIFT) 350 200
350 200
350 200
SEL1 (HOLD/LOAD) 400 250
400 250
400 250
S-IN 125 –100
125 –100
125 –100
th
Hold Time
ps
D 200 – 25
200 – 25
200 – 25
SEL0 (SHIFT) 100 – 200
100 – 200
100 – 200
SEL1 (HOLD/LOAD) 50 – 250
50 – 250
50 – 250
S-IN 300 100
300 100
300 100
tRR
Reset Recovery Time
900 600
900 600
900 600
ps
tPW
Minimum Pulse Width
ps
Clk, MR 400
400
400
tSKEW
Within-Device Skew (Note 2.)
60
60
60
ps
tJITTER
Cycle–to–Cycle Jitter
TBD
TBD
TBD
ps
tr
Rise/Fall Times
tf
(20 - 80%)
ps
300 525 800 300 525 800 300 525 800
1. 10 Series: VEE can vary +0.46 V / –0.06 V.
100 Series: VEE can vary +0.46 V / –0.8 V.
2. Within-device skew is defined as identical transitions on similar paths through a device.
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]