STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VPWR ≤ 16 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE
Input Logic Voltage Thresholds (Note 10)
VINLOGIC
0.8
–
2.2
V
SCLK, SI, Tri-State SO Input Current
0 V to VDD
ISCLK, ISI,
µA
ISO(Tri)
-10
–
10
CS Input Current
CS = VDD
ICS
µA
-10
–
10
CS Pull-Up Current
CS = 0 V
ICS
µA
30
–
100
SO High-State Output Voltage
ISO(high) = -200 µA
VSO(high)
V
VDD - 0.8
–
VDD + 0.3
SO Low-State Output Voltage
ISO(high) = 1.6 mA
VSO(low)
–
V
–
0.4
Input Capacitance on SCLK, SI, Tri-State SO (Note 11)
INT Internal Pull-Up Current
CIN
–
–
20
pF
–
20
40
100
µA
INT Voltage
INT = Open Circuit
INT Voltage
IINT = 1.0 mA
V INT (high)
V
VDD - 0.2
–
VDD + 0.3
V INT (low)
–
V
0.2
0.4
WAKE Internal Pull-Up Current
WAKE Voltage
WAKE = Open Circuit
I WAKE (pu)
20
40
100
µA
V WAKE (high)
V
4.0
4.3
5.2
WAKE Voltage
IWAKE = 1.0 mA
V WAKE(low)
–
V
0.2
0.4
WAKE Voltage
Maximum Voltage Applied to WAKE Through External Pull-Up
V WAKE(max)
–
V
–
40
Notes
10. Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.
11. This parameter is guaranteed by design but is not production tested.
33993/D
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MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA