MCP4242-103I/ML Просмотр технического описания (PDF) - Microchip Technology

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MCP4242-103I/ML

7/8-Bit Single/Dual SPI Digital POT with Volatile Memory

Microchip Technology 

MCP413X/415X/423X/425X

1.0 ELECTRICAL

CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

Absolute Maximum Ratings †

Voltage on VDD with respect to VSS ............... -0.6V to +7.0V

Voltage on CS, SCK, SDI, SDI/SDO, and

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

SHDN with respect to VSS ...................................... -0.6V to 12.5V

Voltage on all other pins (PxA, PxW, PxB, and

SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V

Input clamp current, IIK

(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA

Output clamp current, IOK

(VO < 0 or VO > VDD) ..................................................±20 mA

Maximum output current sunk by any Output pin

......................................................................................25 mA

Maximum output current sourced by any Output pin

......................................................................................25 mA

Maximum current out of VSS pin .................................100 mA

Maximum current into VDD pin ....................................100 mA

Maximum current into PXA, PXW & PXB pins ............±2.5 mA

Storage temperature ....................................-65°C to +150°C

Ambient temperature with power applied

.....................................................................-40°C to +125°C

Total power dissipation (Note 1) ................................400 mW

Soldering temperature of leads (10 seconds) ............. +300°C

ESD protection on all pins .................................. ≥ 4 kV (HBM),

.......................................................................... ≥ 300V (MM)

Maximum Junction Temperature (TJ) ......................... +150°C

Note 1: Power dissipation is calculated as follows:

Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

© 2008 Microchip Technology Inc.

DS22060B-page 3

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