76113SK8 Просмотр технического описания (PDF) - Fairchild Semiconductor
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76113SK8 Datasheet PDF : 12 Pages
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HUF76113SK8
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
tON
VDD = 15V, ID ≅ 6.5A, RL = 2.31Ω,
-
td(ON)
VGS = 10V, RGS = 16Ω
(Figure 16)
-
tr
-
Turn-Off Delay Time
td(OFF)
-
Fall Time
tf
-
Turn-Off Time
tOFF
-
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 2.0A,
-
Qg(5)
VGS = 0V to 5V
RL = 7.5Ω
Ig(REF) = 1.0mA
-
Qg(TH) VGS = 0V to 1V (Figures 14)
-
Qgs
-
Qgd
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
-
(Figure 13)
COSS
-
CRSS
-
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
TEST CONDITIONS
MIN
VSD
ISD =6.5A
-
ISD = 2.0A
trr
ISD = 2.0A, dISD/dt = 100A/µs
-
QRR
ISD = 2.0A, dISD/dt = 100A/µs
-
Typical Performance Curves
TYP
-
6.5
33
45
40
-
17.5
10
0.65
1.10
5.40
585
327
73
TYP
-
-
-
MAX UNITS
59
ns
-
ns
-
ns
-
ns
-
ns
126
ns
21
nC
12
nC
0.78
nC
-
nC
-
nC
-
pF
-
pF
-
pF
MAX
1.25
1.10
47
52
UNITS
V
V
ns
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA , AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
©2003 Fairchild Semiconductor Corporation
8
VGS = 10V, RθJA = 50oC/W
6
4
VGS = 4.5V, RθJA = 177oC/W
2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
HUF76113SK8 Rev. B1
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