MJ21194 Просмотр технического описания (PDF) - Motorola => Freescale
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MJ21194 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Power Transistors
The MJ21193 and MJ21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
• Total Harmonic Distortion Characterized
• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 2.5 A, 80 V, 1 Second
Order this document
by MJ21193/D
MJ2PN1P193*
MJ2NP1N194*
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%.
VCEO(sus)
250
ICEO
—
CASE 1–07
TO–204AA
(TO–3)
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
250
400
5
400
16
30
5
250
1.43
–āā65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
Max
RθJC
0.7
Unit
°C/W
Typical
—
—
Max
Unit
—
Vdc
100
µAdc
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
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