MJE13007-M
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Sustaining Voltage
VCEO
400
V
Collector-Emitter Breakdown Voltage
VCBO
700
V
Emitter-Base Voltage
VEBO
9.0
V
Collector Current
Continuous
IC
Peak (1)
ICM
8.0
A
16
A
Base Current
Continuous
IB
Peak (1)
IBM
4.0
A
8.0
A
Emitter Current
Continuous
IE
Peak (1)
IEM
12
A
24
A
Power Dissipation
TC = 25°C
PD
80
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
1.56
°C/W
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a
mounting torque of 6 to 8•lbs.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA, IB=0
Collector Cutoff Current
ICBO
VCES=700V
VCES=700V, TC=125°C
Emitter Cutoff Current
IEBO
VEB=9.0V, IC=0
DC Current Gain
hFE1
hFE2
IC=2.0A, VCE=5.0V
IC=5.0A, VCE=5.0V
IC=2.0A, IB=0.4A
IC=5.0A, IB=1.0A
Collector-Emitter Saturation Voltage
VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C
IC=5.0A, IB=2.5A
IC=8.0A, IB=2.0A
IC=2.0A, IB=0.4A
Base-Emitter Saturation Voltage
VBE(SAT)
IC=5.0A, IB=1.0A
IC=5.0A, IB=1.0A, TC=100°C
IC=5.0A, IB=2.5A
Current-Gain-Bandwidth Product
fT
IC=500mA, VCE=10V, f=1.0 MHz
Output Capacitance
COB VCB=10V, IE=0, f=0.1MHz
RESISTIVE LOAD (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
tS
VCC=125V, IC=5.0A,
IB1=IB2=1.0A, tP=25μs,
Duty Cycle≤1.0%
tF
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
MIN TYP MAX UNIT
400
V
0.1 mA
1.0 mA
100 μA
8.0
40
5.0
30
1.0
2.0
3.0 V
0.6
3.0
1.2
1.6
V
1.5
1.2 1.5
4.0 14
MHz
80
pF
0.025 0.1 μs
0.5 1.5 μs
1.8 3.0 μs
0.23 0.7 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-028.A