MJL21196G Просмотр технического описания (PDF) - ON Semiconductor
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MJL21196G Datasheet PDF : 8 Pages
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MJL21195, MJL21196
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
−
−
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
OFF CHARACTERISTICS (Note 3)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
100
SECOND BREAKDOWN (Note 3)
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (Nonrepetitive)
(VCE = 80 Vdc, t = 1 s (Nonrepetitive)
ON CHARACTERISTICS (Note 3)
IS/b
4.0
−
−
2.25
−
−
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
25
8.0
−
100
−
−
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
−
−
2.2
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
−
−
−
1.4
−
4
DYNAMIC CHARACTERISTICS (Note 3)
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
−
0.8
−
hFE
matched
−
0.08
−
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
−
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%.
Cob
−
−
500
PNP MJL21195
6.5
6.0
VCE = 10 V
5.5
5.0
4.5
VCE = 5 V
4.0
3.5
3.0
TJ = 25°C
ftest = 1 MHz
2.5
2.0
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJL21196
7.5
7.0
6.5
VCE = 10 V
6.0
5.5
5.0
VCE = 5 V
4.5
4.0
3.5
3.0
2.5 TJ = 25°C
2.0 ftest = 1 MHz
1.5
1.0
10
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 2. Typical Current Gain
Bandwidth Product
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
10
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