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MMBTH10L-C-AN3-R Просмотр технического описания (PDF) - Unisonic Technologies
Номер в каталоге
Компоненты Описание
производитель
MMBTH10L-C-AN3-R
NPN SILICON TRANSISTOR
Unisonic Technologies
MMBTH10L-C-AN3-R Datasheet PDF : 5 Pages
1
2
3
4
5
MMBTH10
TYPICAL CHARACTERISTICS(Cont.)
Input Admittance
120
V
CE
=10V
I
C
=5mA
80
g
ib
40
0
-40
-80
-120
0
b
ib
200
500
Frequency, f (MHz)
1000
Forward Transfer Admittance
120
V
CE
=10V
b
fb
I
C
=5mA
80
40
0
g
fb
-40
-80
-120
0
200
500
Frequency, f (MHz)
1000
Input Admittance
24
V
CE
=10V
20
Ic=2mA
g
ie
16
12
b
ie
8
4
0
0
200
500
1000
Frequency, f (MHz)
NPN SILICON TRANSISTOR
12
V
CE
=10V
I
C
=5mA
10
Output Admittance
8
6
b
ob
4
g
ob
2
0
100
200
500
Frequency, f (MHz)
1000
Reverse Transfer Admittan
8
V
CE
=10V
I
C
=5mA
6
4
-b
rb
2
-g
rb
0
0
200
500
Frequency, f (MHz)
Output Admittance
6
V
CE
=10V
Ic=2mA
5
1000
4
b
oe
3
2
1
g
oe
0
0
200
500
1000
Frequency, f (MHz)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-003.F
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