MPSA13(Old_V) Просмотр технического описания (PDF) - Unisonic Technologies
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MPSA13 Datasheet PDF : 3 Pages
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UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
1000k
Current Gain & Collector Current
100k
I(tot)
mA
hFE@VCE=5V
Saturation Voltage & Collector Current
10000
1000
I(tot)
mA
VBE(sat)@IC=100IB
VCE(sat)@IC=100IB
10k
0.1
10000
1
10
100
Collector Current (mA)
On Voltage & Collector Current
1000
I(tot)
mA
1000
VBE(on)@VCE=5V
100
1
10
100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
10
I(tot)
mA
Cob
100
0.1
1
10
100
Collector Current (mA)
1000
Cutoff Frequency & Collector Current
1000
I(tot)
mA
VCE=5V
100
10
1
10
100
1000
Collector Current (mA)
1
1
1000
100
10
100
Reverse-Biased Voltage(V)
Safe Operating Area
I(tot)
mA
PT=1s
PT=100ms
PT=1ms
10
1
1
10
100
Forward Voltage-VCE(V)
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R208-001,B
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