MRF6S19100H Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MRF6S19100H

RF Power Field Effect Transistor

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

108

107

106

105

90 110 130 150 170 190 210 230 250

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 22 W Avg., and ηD = 28%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 12. MTTF Factor versus Junction Temperature

N - CDMA TEST SIGNAL

100

10

1

0.1

0.01

0.001

0.0001

0

IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth

Carriers. ACPR Measured in 30 kHz Bandwidth @

±885 kHz Offset. IM3 Measured in 1.2288 MHz

Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

2

4

6

8

PEAK−TO−AVERAGE (dB)

Figure 13. 2 - Carrier CCDF N - CDMA

0

1.2288 MHz

−10

Channel BW

−20

−IM3 in

−30

1.2288 MHz

Integrated BW

−40

+IM3 in

1.2288 MHz

Integrated BW

−50

−60

−70

−80

10

−90

−ACPR in 30 kHz +ACPR in 30 kHz

Integrated BW

Integrated BW

−100

−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5

6 7.5

f, FREQUENCY (MHz)

Figure 14. 2 - Carrier N - CDMA Spectrum

RF Device Data

Freescale Semiconductor

MRF6S19100HR3 MRF6S19100HSR3

7

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