MRF6S18100NR1(2006) Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF6S18100NR1
(Rev.:2006)

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted (continued)

Characteristic

Symbol

Min

Typ

Max

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout =

40 W Avg., 1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation

Power Gain

Gps

—

15

—

Drain Efficiency

ηD

—

35

—

Error Vector Magnitude

EVM

—

2

—

Spectral Regrowth at 400 kHz Offset

SR1

—

- 63

—

Spectral Regrowth at 600 kHz Offset

SR2

—

- 76

—

Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W,

1805- 1880 MHz

Power Gain

Gps

—

14.5

—

Drain Efficiency

ηD

—

49

—

Input Return Loss

IRL

—

- 12

—

Pout @ 1 dB Compression Point

P1dB

—

110

—

Unit

dB

%

% rms

dBc

dBc

dB

%

dB

W

RF Device Data

Freescale Semiconductor

MRF6S18100NR1 MRF6S18100NBR1

3

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