MRF9002NR2 Просмотр технического описания (PDF) - Freescale Semiconductor
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Компоненты Описание
производитель
MRF9002NR2 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
35
19.5
33
19.25
Pout
31
Gps
19
29
18.75
27
18.5
25
18.25
23
18
21
VDS = 26 Vdc
17.75
19
IDQ = 25 mA
17.5
f = 960 MHz
17
Single−Tone
17.25
15
17
0
2
4
6
8 10 12 14 16
Pin, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
23
22
100 mA
21
75 mA
20
50 mA
19
18
25 mA
17
VDS = 26 Vdc
16
f = 960 MHz
Single−Tone
15
10
15
20
25
30
35
40
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
20.3
−28
Gps
20.2
−29
20.1
−30
20
Pout = 2 W (PEP)
IDQ = 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
IMD
−31
19.9
−32
22 23 24 25 26 27 28 29 30
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
−20
−25
−30
−35
−40
−45
25 mA
−50 50 mA
−55 75 mA
−60 100 mA
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
−65
5
10
15
20
25
30
35 40
Pout, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versus
Output Power
0
−10
−20
3rd Order
−30
−40
5th Order
−50
−60
−70
10
7th Order
15
20
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
25
30
35
40
Pout, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Products
versus Output Power
41
39 Pin = 20 dBm
37
35 15 dBm
33
31
29 10 dBm
VDS = 26 Vdc
IDQ = 25 mA
Single−Tone
27
25
925
935
945
955
965
975 985
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
RF Device Data
Freescale Semiconductor
MRF9002NR2
5
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