MTB6N60 Просмотр технического описания (PDF) - Motorola => Freescale

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MTB6N60

TMOS E-FET™ Power Field Effect Transistor

Motorola => Freescale 

MTB6N60E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

600

—

—

689

—

Vdc

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 600 Vdc, VGS = 0 Vdc)

(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

µAdc

—

—

1.0

—

—

50

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IGSS

—

—

100

nAdc

VGS(th)

2.0

3.0

4.0

Vdc

—

7.1

—

mV/°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 6.0 Adc)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)

RDS(on)

—

0.94

1.2

Ohms

VDS(on)

Vdc

—

6.0

8.6

—

—

7.6

Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(VDS = 300 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 300 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

2.0

5.5

—

mhos

—

1498

2100

pF

—

158

217

—

29

56

—

14

30

ns

—

19

40

—

40

80

—

26

50

—

35.5

50

nC

—

8.1

—

—

14.1

—

—

15.8

—

Vdc

—

0.83

1.5

—

0.72

—

Reverse Recovery Time

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

266

—

ns

—

166

—

—

100

—

—

2.5

—

µC

nH

—

4.5

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

—

nH

—

7.5

2

Motorola TMOS Power MOSFET Transistor Device Data

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