MTP2955V Просмотр технического описания (PDF) - Motorola => Freescale
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MTP2955V Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTP2955V
25
TJ = 25°C
20
15
VGS = 10 V
9V
8V
7V
10
6V
5
5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
24
VDS ≥ 10 V
21
18
TJ = – 55°C
25°C
100°C
15
12
9
6
3
0
2
3
4
5
6
7
8
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.40
0.35 VGS = 10 V
0.30
TJ = 100°C
0.25
25°C
0.20
0.15
– 55°C
0.10
0.05
0
0
3
6
9
12 15 18 21 24
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.250
0.225
TJ = 25°C
0.200
VGS = 10 V
0.175
0.150
15 V
0.125
0.100
0.075
0.050
0
3
6
9 12 15 18 21 24
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
1.8 VGS = 10 V
1.6 ID = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
– 50 – 25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 125°C
100°C
10
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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