MTP60N06 Просмотр технического описания (PDF) - Motorola => Freescale

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MTP60N06

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

Motorola => Freescale 

MTP60N06HD

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0) (3) V(BR)DSS

60

—

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current

(VGS = ± 20 Vdc, VDS = 0 Vdc)

IDSS

—

—

IGSS

—

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

(Cpk ≥ 3.0) (3)

VGS(th)

2.0

—

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 30 Adc)

(Cpk ≥ 3.0) (3)

RDS(on)

—

Drain–to–Source On–Voltage (VGS = 10 Vdc)

(ID = 60 Adc)

(ID = 30 Adc, TJ = 125°C)

Forward Transconductance

(VDS = 5.0 Vdc, ID = 30 Adc)

VDS(on)

—

—

gFS

15

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (2)

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 30 Vdc, ID = 60 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 48 Vdc, ID = 60 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

td(on)

—

tr

—

td(off)

—

tf

—

QT

—

Q1

—

Q2

—

Q3

—

Forward On–Voltage

(IS = 60 Adc, VGS = 0 Vdc)

(IS = 60 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

(See Figure 15)

(IS = 60 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

trr

—

ta

—

tb

—

QRR

—

LD

—

—

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

LS

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

Typ

Max

Unit

Vdc

—

—

71

—

mV/°C

µAdc

—

10

—

100

nAdc

—

100

3.0

7.0

0.011

—

—

20

4.0

—

0.014

1.0

0.9

—

Vdc

mV/°C

Ohm

Vdc

mhos

1950

2800

pF

660

924

147

300

14

26

ns

197

394

50

102

124

246

51

71

nC

12

—

24

—

21

—

Vdc

0.99

1.2

0.89

—

60

—

ns

36

—

24

—

0.143

—

µC

nH

3.5

—

4.5

—

nH

7.5

—

2

Motorola TMOS Power MOSFET Transistor Device Data

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