N0603N-S23-AY(2020) Просмотр технического описания (PDF) - Renesas Electronics
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N0603N-S23-AY Datasheet PDF : 7 Pages
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N0603N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
8
6
4
2
0
-50
VGS = 10 V
ID = 50 A
Pulsed
0
50
100
150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
tf
100
td(off)
10
tr
1
0.1
1
td(on)
VDD = 30 V
VGS = 10 V
RG = 0 Ω
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
1000
VGS = 10 V
100
10
0V
1
0.1
0.01
0
Pulsed
0.4
0.8
1.2
1.6
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1.0 MHz
100
0.01
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
14
12
10
8
6
4
2
0
0
VDD = 12 V
30 V
48 V
ID = 100 A
20 40 60 80 100 120 140
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/µs
1
10
100
IF - Diode Forward Current - A
R07DS0559EJ0200 Rev.2.00
2020.6.10
Page 5 of 6
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