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NCP5111PG

High Voltage, High and Low Side Driver

ON Semiconductor 

NCP5111

High Voltage, High and Low

Side Driver

The NCP5111 is a high voltage power gate driver providing two

outputs for direct drive of 2 N−channel power MOSFETs or IGBTs

arranged in a half−bridge configuration.

It uses the bootstrap technique to ensure a proper drive of the

high−side power switch.

Features

• High Voltage Range: up to 600 V

• dV/dt Immunity ±50 V/nsec

• Gate Drive Supply Range from 10 V to 20 V

• High and Low Drive Outputs

• Output Source / Sink Current Capability 250 mA / 500 mA

• 3.3 V and 5 V Input Logic Compatible

• Up to VCC Swing on Input Pins

• Extended Allowable Negative Bridge Pin Voltage Swing to −10 V

for Signal Propagation

• Matched Propagation Delays between Both Channels

• One Input with Internal Fixed Dead Time (650 ns)

• Under VCC LockOut (UVLO) for Both Channels

• Pin−to−Pin Compatible with Industry Standards

• These are Pb−Free Devices

Typical Applications

• Half−bridge Power Converters

www.onsemi.com

1

SOIC−8

D SUFFIX

CASE 751

MARKING

DIAGRAMS

8

P5111

ALYW

G

1

PDIP−8

P SUFFIX

CASE 626

NCP5111

AWL

YYWWG

NCP5111

A

L or WL

Y or YY

W or WW

G or G

= Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

PINOUT INFORMATION

VCC

IN

GND

DRV_LO

18

27

36

45

VBOOT

DRV_HI

BRIDGE

NC

ORDERING INFORMATION

Device

Package

Shipping†

NCP5111PG

PDIP−8 50 Units / Rail

(Pb−Free)

NCP5111DR2G

SOIC−8 2500 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2016

1

February, 2016 − Rev. 6

Publication Order Number:

NCP5111/D

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