NTE2505 Просмотр технического описания (PDF) - NTE Electronics

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NTE2505

Silicon NPN Transistor Low Frequency, General Purpose Amp

NTE Electronics 

NTE2505

Silicon NPN Transistor

Low Frequency, General Purpose Amp

Features:

D High Current Capacity

D High DC Current Gain

D Low Collector Emitter Saturation Voltage

D High Emitter Base Breakdown Voltage

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA

Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain–Bandwidth Product

Output Capacitance

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

ICBO

IEBO

hFE

fT

Cob

VCE(sat)

VBE(sat)

VCB = 20V, IE = 0

VEB = 10V, IC = 0

VCE = 5V, IC = 500mA

VCE = 5V, IC = 1A

VCE = 10V, IC = 50mA

VCB = 10V, f = 1MHz

IC = 1A, IB = 20mA

IC = 1A, IB = 20mA

Min Typ Max Unit

– – 100 nA

– – 100 nA

800 1500 3200

600 – –

– 260 – MHz

– 27 – pF

– 0.15 0.5 V

– 0.85 1.2 V

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