NTE2505 Просмотр технического описания (PDF) - NTE Electronics

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NTE2505

Silicon NPN Transistor Low Frequency, General Purpose Amp

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0

30 – – V

Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞

25 – – V

Emitter Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0

15 – – V

Turn–On Time

Storage Time

Fall Time

ton VCC = 10V, VBE = –5V,

– 0.14 – µs

tstg

100IB1 = –100IB2 = IC = 700mA,

Pulse Width = 20µs,

–

1.35

–

µs

tf

Duty Cycle ≤ 1%

– 0.1 – µs

.271 (6.9)

.098

(2.5)

.137

(3.5)

B

C

E

.039 (1.0)

.039 (1.0)

.122

(3.1)

.177

(4.5)

.161

(4.1)

.098 (2.5)

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