2973 Просмотр технического описания (PDF) - NTE Electronics

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Компоненты Описание

производитель

2973

MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE Electronics 

NTE2973

MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Applications:

D SMPS

D DC–DC Converter

D Battery Charger

D Power Supply of Printer

D Copier

D HDD, FDD, TV, VCR

D Personal Computer

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V

Drain Current, ID

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A

Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W

Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W

Electrical Characteristics: (Tch = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Drain–Source Breakdown Voltage

Gate–Source Breakdown Voltage

Gate–Source Leakage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Static Drain–Source ON Resistance

Drain–Source On–State Voltage

Forward Transfer Admittance

V(BR)DSS

V(BR)GSS

IGSS

IDSS

VGS(th)

RDS(on)

VDS(on)

|yfs|

VDS = 0V, ID = 1mA

VDS = 0V, IG = ±100µA

VGS = ±25V, VDS = 0V

VDS = 900V, VGS = 0

VDS = 10V, ID = 1mA

VGS = 10V, ID = 7A

VGS = 10V, ID = 7A

VGS = 10V, ID = 7A

Min Typ Max Unit

900 –

–

V

±30 –

–

V

– – ±10 µA

– – 1.0 mA

2.0 3.0 4.0 V

– 0.63 0.85 Ω

– 4.41 5.95 V

9 15 –

S

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