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P3055LLG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Unspecified 

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P3055LLG

SOT-223

Lead-Free

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

25

90mΩ

6A

D

G

S

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current1

TC = 25 °C

TC = 100 °C

Avalanche Energy

Repetitive Avalanche Energy2

L = 0.1mH

L = 0.05mH

Power Dissipation

TC = 25 °C

TC = 100 °C

Operating Junction & Storage Temperature Range

Lead Temperature (1/16” from case for 10 sec.)

VGS

ID

IDM

EAS

EAR

PD

Tj, Tstg

TL

LIMITS

±20

6

3.6

22

60

3

3

1.5

-55 to 150

275

UNITS

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

Junction-to-Case

RθJC

Junction-to-Ambient

RθJA

1Pulse width limited by maximum junction temperature.

2Duty cycle ≤ 1%

TYPICAL

MAXIMUM

12

42

UNITS

°C / W

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current1

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(ON)

STATIC

VGS = 0V, ID = 250µA

VDS = VGS, ID = 250µA

VDS = 0V, VGS = ±20V

VDS = 20V, VGS = 0V

VDS = 20V, VGS = 0V, TJ = 125 °C

VDS = 10V, VGS = 10V

LIMITS

UNIT

MIN TYP MAX

25

V

0.8 1.2 2.5

±250 nA

25

µA

250

6

A

1

NOV-05-2004

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