PBSS3515E,135 Просмотр технического описания (PDF) - Philips Electronics
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PBSS3515E,135 Datasheet PDF : 11 Pages
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Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
600
(1)
hFE
400
(2)
200
(3)
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0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1
VCEsat
(mV)
−10−1
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(1)
(2)
(3)
−10−2
−1100
VBE
(mV)
−900
(1)
−700
(2)
−500
(3)
−300
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−100
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Base-emitter voltage as a function of collector
current; typical values
−1
VCEsat
(mV)
−10−1
(1)
(2)
−10−2
(3)
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−10−3
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
−10−3
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14878
Product data sheet
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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