PBYL1025B Просмотр технического описания (PDF) - Philips Electronics
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PBYL1025B Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL1025B series
10 Forward dissipation, PF (W)
Vo = 0.29 V
Rs = 0.016 Ohms
8
PBYL1025 Tmb(max) / C 120
126
D = 1.0
6
0.5
132
0.2
0.1
4
138
I
tp
D = tp
T
2
144
T
t
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W)
8
Vo = 0.29 V
7 Rs = 0.016 Ohms
PBYL1025 Tmb(max) / C
126
6
2.2 1.9
a = 1.57 132
5
2.8
4
4
138
3
2
144
1
0
150
0
2
4
6
8
10
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Forward current, IF (A)
15
Tj = 25 C
Tj = 125 C
typ
10
max
PBYR725D
5
0
0
0.2
0.4
0.6
0.8
1
Forward voltage, VR (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100mA Reverse current, IR (A)
125 C
10mA
100 C
1mA 75 C
50 C
100uA
Tj = 25 C
10uA
PBYR725D
1uA
0
5
10
15
20
25
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
10000 Junction capacitance, Cd (pF)
PBYR725D
1000
100
1
10
100
Reverse voltage, VR (V)
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYL1025
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
October 1998
3
Rev 1.100
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