PEMD14 Просмотр технического описания (PDF) - NXP Semiconductors.
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PEMD14 Datasheet PDF : 11 Pages
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NXP Semiconductors
PEMD14; PUMD14
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IO
ICM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
output current (DC)
-
peak collector current
-
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1] [2] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1] [2] -
Max Unit
50
V
50
V
5
V
100
mA
100
mA
200
mW
200
mW
+150 °C
150
°C
+150 °C
300
mW
300
mW
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Min Typ Max Unit
[1] -
-
625 K/W
[1] [2] -
-
625 K/W
[1] -
-
416 K/W
[1] [2] -
-
416 K/W
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMD14_PUMD14_2
Product data sheet
Rev. 02 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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