PEMD9 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PEMD9 Datasheet PDF : 8 Pages
| |||
NXP Semiconductors
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
PEMB9; PUMB9
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral drivers
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
TR1
PNP
TR2
PNP
R1
bias resistor
R2
bias resistor
TYP.
−
−
−
−
10
47
MAX. UNIT
−50 V
−100 mA
−
−
−
−
−
kΩ
−
kΩ
DESCRIPTION
PNP/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PEMB9
PUMB9
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
−
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE(1)
NPN/PNP
COMPLEMENT
Z6
PEMD9
B*9
PUMD9
NPN/NPN
COMPLEMENT
PEMH9
PUMH9
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMB9
PUMB9
SIMPLIFIED OUTLINE AND SYMBOL
6
5
4
6
5
4
R1 R2
TR2
TR1
R2 R1
1
2
3
1
2
3
Top view
MAM477
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 03
2
Share Link: 