PMP5501V Просмотр технического описания (PDF) - NXP Semiconductors.
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PMP5501V Datasheet PDF : 14 Pages
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NXP Semiconductors
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT666
[1][2] -
-
625
SOT353
[1] -
-
625
SOT363
[1] -
-
625
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT666
[1][2] -
-
416
SOT353
[1] -
-
416
SOT363
[1] -
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
IEBO
hFE
VCEsat
VBEsat
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCB = −30 V;
IE = 0 A
VCB = −30 V;
IE = 0 A;
Tj = 150 °C
VEB = −5 V;
IC = 0 A
VCE = −5 V;
IC = −10 µA
VCE = −5 V;
IC = −2 mA
IC = −10 mA;
IB = −0.5 mA
IC = −100 mA;
IB = −5 mA
IC = −10 mA;
IB = −0.5 mA
IC = −100 mA;
IB = −5 mA
Min Typ Max Unit
-
-
−15 nA
-
-
−5
µA
-
-
200
-
-
[1] -
[1] -
-
−100 nA
250 -
290 450
−50 −200 mV
−200 −400 mV
−760 -
mV
−920 -
mV
PMP5501V_G_Y_3
Product data sheet
Rev. 03 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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