Q62702-A1006 Просмотр технического описания (PDF) - Siemens AG

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производитель

Q62702-A1006

Silicon Crossover Ring Quad Schottky Diode

Siemens AG 

BAT 114-099R

Thermal Resistance

(per diode)

Parameter

Junction to soldering point

Junction to ambient1)

1) Mounted on alumina 15 mm × 16.7 mm to 0.7 mm

Symbol

RthJS

RthJA

Limit Values

≤ 780

≤ 1020

Unit

K/W

K/W

Electrical Characteristics

(per diode; TA = 25 °C)

Parameter

Forward voltage

IF = 1 mA

IF = 10 mA

Forward voltage matching1)

IF = 10 mA

Diode capacitance

VR = 0 V, f = 1 MHz

Forward resistance

IF = 10 mA / 50 mA

Symbol

VF

∆VF

CT

RF

Limit Values Unit

min. typ. max.

V

− 0.58 0.7

− 0.68 0.78

mV

− − 20

pF

− 0.25 −

Ω

− 5.5 −

1) ∆VF is difference between lowest and highest VF in component.

Semiconductor Group

2

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