RB160M-90 Просмотр технического описания (PDF) - ROHM Semiconductor
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RB160M-90 Datasheet PDF : 4 Pages
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RB160M-90
Data Sheet
1
0.8
0.6
DC D=1/2
0.4
0.2
Sin(θ＝180)
0
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
3
0A
2.5
0V
2
DC
1.5
D=1/2
1
0.5 Sin(θ＝180)
Io
VR
t
D=t/T
VR=45V
T Tj=150℃
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
3
0A
2.5
0V
2
DC
1.5
D=1/2
1
Sin(θ＝180)
0.5
Io
VR
t
D=t/T
VR=45V
T Tj=150℃
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
25
20
15
AVE:10.7kV
10
AVE:1.70kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
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2011.04 - Rev.C
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