BDX64(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BDX64
(Rev.:2012)

PNP SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX64 – A – B – C

PNP SILICON DARLINGTON POWER TRANSISTOR

The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package.

High current power darlingtons designed for power amplification and switching applications.

The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCEO

Collector-Emitter Voltage

VCEV

VEBO

IC

IB

PT

TJ

TS

Collector-EmitterVoltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation

Junction Temperature

Storage Temperature

VBE=-1.5 V

IC(RMS)

ICM

@ TC = 25°

BDX64

BDX64A

BDX64B

BDX64C

BDX64

BDX64A

BDX64B

BDX64C

Value

-60

-80

-100

-120

-60

-80

-100

-120

-5.0

-12

-16

0.2

117

-55 to +200

Unit

V

V

V

A

A

W

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

Value

1.5

Unit

°C/W

24/10/2012

COMSET SEMICONDUCTORS

1|4

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