BDX64A Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BDX64A

PNP SILICON DARLINGTONS

Comset Semiconductors 

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX64

BDX64A

BDX64B

BDX64C

Value

1.5

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=-0.1 A, IB=0, L=25mH

ICEO

IEBO

ICBO

VCE(SAT)

Collector Cutoff Current

Emitter Cutoff Current

VCE=-30 V

VCE=-40 V

VCE=-50 V

VCE=-60 V

VBE=-5 V

Collector-Base Cutoff

Current

VCBO=-60 V

VCBO=-40 V

TCASE=200°C

VCBO=-80 V

VCBO=-50 V

TCASE=200°C

VCBO=-100 V

VCBO=-60 V

TCASE=200°C

VCBO=-120 V

VCBO=-70 V

TCASE=200°

Collector-Emitter saturation

Voltage (*)

IC=-5.0 A, IB=-20 mA

VF

Forward Voltage (pulse

method)

IF=5 A

BDX64 -60 - -

BDX64A -80 -

BDX64B -100 -

-

-

V

BDX64C -120 - -

BDX64

-

BDX64A -

BDX64B -

BDX64C -

BDX64

BDX64A

BDX64B

-

BDX64C

-

BDX64

-

-

BDX64A -

-

BDX64B -

-

BDX64C -

-

-

-

-1.0 mA

-

- -5.0 mA

- 0.2

-2

- 0.2

-2

- 0.2

-

-2

- 0.2

-

2

BDX64

BDX64A

BDX64B

-

- -2

V

BDX64C

BDX64

BDX64A

BDX64B

-

1.8

-

V

BDX64C

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