RJH60F4DPK Просмотр технического описания (PDF) - Renesas Electronics
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RJH60F4DPK Datasheet PDF : 8 Pages
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RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Preliminary Datasheet
R07DS0235EJ0300
(Previous: REJ03G1835-0200)
Rev.3.00
Nov 17, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
1
23
1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
j-c
Tj
Tstg
Ratings
600
30
60
30
120
100
235.8
0.53
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 1 of 7
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