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RN4909 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
RN4909
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
RN4909 Datasheet PDF : 5 Pages
1
2
3
4
5
Q1, Q2 Common Maximum Ratings
(Ta = 25
°
C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
*
Total rating
Symbol
P
C
*
T
j
T
stg
Rating
Unit
200
mW
150
°
C
−
55~150
°
C
Marking
RN4909
Equivalent Circuit
(Top View)
2
2001-06-07
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