RQA0009TXDQS Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RQA0009TXDQS

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0009TXDQS

Evaluation Circuit (f = 465 MHz)

C7 C6

VG

R2

C5

R1

50 Ω C1

RFIN

C2 C3 C4

C13 C14

VD

C12

L3

C8

L1 L2 C11 50 Ω

RFOUT

C9 C10

C1, C5, C11, C12

C2, C8

C3

C4, C9, C10

C6, C13

C7, C14

L1

L2

L3

R1

R2

100 pF Chip Capacitor

22 pF Chip Capacitor

15 pF Chip Capacitor

10 pF Chip Capacitor

2200 pF Chip Capacitor

1 µF / 35 V Chip Tantalum Capacitor

1 nH Chip Inductor

1.8 nH Chip Inductor

8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire

670 Ω Chip Resistor

6.8 kΩ Chip Resistor

REJ03G1520-0100 Rev.1.00 Jul 04, 2007

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