RQA0008RXTL-E(2006) Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RQA0008RXTL-E
(Rev.:2006)

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0008RXDQS

Evaluation Circuit (f = 520 MHz)

C7 C6

VG

R3

C5

50 Ω C1

IN

C2 C3 C4

R2

L2

R1

C12 C13

VD

C11

L1

L3

C10 50 Ω

OUT

C8 C9

C1, C5, C10, C11: 100 pF Chip Capacitor

C2, C3, C8:

10 pF Chip Capacitor

C4:

5 pF Chip Capacitor

C6, C12:

1000 pF Chip Capacitor

C7, C13:

2.2 µF Electrolysis Capacitor

C9:

11 pF Chip Capacitor

L1:

8 Turns D : 0.5 mm, φ 2.4 mm Enamel Wire

L2:

1.2 nH Chip Inductor

L3:

1.0 nH Chip Inductor

R1:

51 Ω Chip Resistor

R2:

510 Ω Chip Resistor

R3:

3.3 kΩ Chip Resistor

Rev.1.00 Oct 16, 2006 page 4 of 12

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