SC1116
POWER MANAGEMENT
Application Information
Overview
The SC1116 linear controller is designed to meet the
JEDEC specifications for termination of DDR-SDRAM.
Double Data Rate (DDR) memory is clocked at the same
speed as older SDRAM (synchronous dynamic random
access memory), yet handles twice the amount of data
by using the rising and falling edge of the clock signal for
data transfers. Another difference is that DDR memory
requires 2.5V instead of 3.3V used by standard SDRAM.
The other feature that separates DDR memory from a
conventional type is employment of the VTT – termination
voltage. Main requirements for the VTT are that it must
track variations of VDDQ and be able to supply (source)
current, and absorb (sink) current.
The SC1116 controller offers a low cost solution for DDR
termination voltage regulation by using external pass el-
ements (MOSFETs). Having the flexibility of choosing the
MOSFETs allows for optimization on the basis of cost/
size/performance of the specific application.
Test Circuit & Waveforms
The test circuit is shown below in Figure 1.
Note that VREF voltage is supplied externally to eliminate
inaccuracy caused by resistor divider.
V DDQ=2.5V
V cc=5V
V ref=1.25V
C1
1 00 uF
3 2m
Q1
IR37 14
U1
S C1 1 16
1 VCC
C2
1 uF
2 GND
DRVH 6
FB 5
3 R EF
DRVL 4
C3
0 .1uF
R3
1k
C4
4 .7n F
V TT =1.25V typ
+/-3A
Iso urce/ Isink 3A IsIosuinrcke
C6
2 70 uF
2 2m
0A to 6A 2SxteIspin k
Pu lse loa d, dc=50%
Po wer
Su pply
Q2
IR37 14
R4
1k
C5
4 .7nF
Cu rrent
Pro be
E lectronic
Loa d
Figure 1.
2007 Semtech Corp.
4
www.semtech.com