SI2301BDS Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2301BDS Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
VGS = 5 thru 2.5 V
8
8
2V
6
6
Si2301BDS
Vishay Siliconix
TC = - 55 °C
25 °C
125 °C
4
2
0
0
0.5
1.5 V
1V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
0.4
0.3
0.2
0.1
0.0
0
VGS = 2.5 V
VGS = 4.5 V
2
4
6
8
10
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 2.8 A
4
600
Ciss
400
200
Coss
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 2.8 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72066
www.vishay.com
S11-2044-Rev. F, 17-Oct-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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