SI2301BDS Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SI2301BDS Datasheet PDF : 9 Pages
| |||
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.6
TJ = 150 °C
1
TJ = 25 °C
0.5
0.4
ID = 2.8 A
0.3
0.2
0.1
0.1
0
0.2 0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
10
0.3
0.2
0.1
0.0
- 0.1
ID = 250 µA
8
6
4
TA = 25 °C
2
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
100
10
Limited by
RDS(on)*
10 µs
100 µs
1
1 ms
TA = 25 °C
Single Pulse
0.1
10 ms
100 ms
DC, 100 s, 10 s, 1 s
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Square Wave Pulse Duration (s)
Safe Operating Area
www.vishay.com
Document Number: 72066
4
S11-2044-Rev. F, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 