SI2301ADS Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2301ADS Datasheet PDF : 4 Pages
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Si2301ADS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V, TJ = 55_C
VDS v –5 V, VGS = –4.5 V
VDS v –5 V, VGS = –2.5 V
VGS = –4.5 V, ID = –2.8 A
VGS = –2.5 V, ID = –2.0 A
VDS = –5 V, ID = –2.8 A
IS = –0.75 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = –6 V, VGS = –4.5 V
ID ^ –2.8 A
VDS = –6 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = –6 V, RL = 6 W
ID ^ –1.0 A, VGEN = –4.5 V
RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
Limits
Min
Typ
Max
Unit
–20
–0.45
V
–0.95
"100
nA
–1
mA
–10
–6
A
–3
0.093
0.130
W
0.140
0.190
6.5
S
–0.80
–1.2
V
4.2
10
0.8
nC
0.8
500
115
pF
62
6
25
30
60
ns
25
70
10
60
www.vishay.com
2
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
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