SI2301ADS Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2301ADS Datasheet PDF : 4 Pages
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Si2301ADS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.6
1
TJ = 150_C
0.1
TJ = 25_C
0.01
0.5
0.4
0.3
ID = 3.6 A
0.2
0.1
0.001
0
0.4
0.2 0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.0
0
2
4
6
8
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
10
0.3
8
0.2
ID = 250 mA
6
0.1
4
0.0
–0.1
2
–0.2
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
0.10
1.00
10.00 100.00 1000.00
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
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4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
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