SI3200 Просмотр технического описания (PDF) - Silicon Laboratories
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SI3200 Datasheet PDF : 112 Pages
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Si3220/25 Si3200/02
Table 2. Recommended Operating Conditions
Parameter
Symbol
Test
Min*
Typ
Max* Unit
Condition
Ambient Temperature
Ambient Temperature
TA
K/F-Grade
0
25
70
oC
TA
B/G-Grade
–40
25
85
oC
Supply Voltage, Si3220/Si3225
VDD1–VDD4
3.13
3.3/5.0
5.25
V
Supply Voltage, Si3200/Si3202
High Battery Supply Voltage, Si3200
VDD
VBATH
3.13
3.3/5.0
5.25
V
–15
—
–99
V
Low Battery Supply Voltage, Si3200
High Battery Supply Voltage, Si3202
VBATL
VBATH
–15
—
VBATH
V
–15
—
–125
V
Low Battery Supply Voltage, Si3202
VBATL
–15
—
VBATH
V
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
Table 3. 3.3 V Power Supply Characteristics1
(VDD, VDD1 – VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min Typ Max Unit
VDD1–VDD4 Supply
Current (Si3220/
Si3225)
IVDD1–IVDD4
Sleep mode, RESET = 0
Open (high-impedance)
Active on-hook standby
—
200
— µA
—
17
— mA
—
16
— mA
Forward/reverse active off-hook
— 45 + ILIM — mA
+ ABIAS
Forward/reverse active OHT
OBIAS = 4 mA, VBAT = –70 V
—
47
— mA
RingingS, VinReINWGa=ve4,51VRrmEsN, VlBoAaTd2= –70 V,
—
26
— mA
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "3.14.4. Ringing Power Considerations" on page 54 for current and power consumption under other operating
conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional (VDD + |VBAT|) x ILOOP term.
6
Rev. 1.3
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