SMM150 Просмотр технического описания (PDF) - Summit Microelectronics
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SMM150 Datasheet PDF : 22 Pages
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SMM150
Preliminary Information
ABSOLUTE MAXIMUM RATINGS
Temperature Under Bias ...................... -55°C to 125°C
Storage Temperature QFN ................... -65°C to 150°C
Terminal Voltage with Respect to GND:
VDD Supply Voltage ..........................-0.3V to 6.0V
All Others ................................-0.3V to VDD + 0.7V
FAULT#…………………………….… GND to 15.0V
Output Short Circuit Current ............................... 100mA
Reflow Solder Temperature (10 secs)….………....240°C
Junction Temperature.........................…….....…...150°C
ESD Rating per JEDEC……………………..……..2000V
Latch-Up testing per JEDEC………..……......…±100mA
Note - The device is not guaranteed to function outside its operating
rating. Stresses listed under Absolute Maximum Ratings may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions
outside those listed in the operational sections of the specification is
not implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability. Devices are
ESD sensitive. Handling precautions are recommended.
DC OPERATING CHARACTERISTICS
RECOMMENDED OPERATING CONDITIONS
Temperature Range (Industrial) .......... –40°C to +85°C
(Commercial).............. 0°C to +70°C
VDD Supply Voltage.................................. 2.7V to 5.5V
Inputs.........................................................GND to VDD
Package Thermal Resistance (θJA)
28 Pad QFN…………….…………………….…80oC/W
20 Ball Ultra CSPTM………..………….…….…TBDoC/W
Moisture Classification Level 1 (MSL 1) per J-STD- 020
RELIABILITY CHARACTERISTICS
Data Retention……………………………..…..100 Years
Endurance……………………….……….100,000 Cycles
(Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.)
Symbol
Parameter
Notes
Min.
Typ.
Max Unit
VDD
Supply Voltage
2.7
3.3
5.5
V
VM
Positive Sense Voltage
VM pin
0.3
VDD
V
IDD
Power Supply Current from
VDD
TRIM pin floating
3
mA
ITRIM
TRIM output current through TRIM Sourcing Max Current
100Ω to 1.0V
TRIM Sinking Max Current
1.5
mA
-1.5
mA
VTRIM
VADOC
TRIM output voltage range
Margin Range
ITRIM ±1.5mA
Depends on Trim range of DC-
DC Converter
GND
0.3
2.5
V
VDD
V
VIH
Input High Voltage
SDA,SCL,WP,MUP,MDN
VDD = 2.7V
VDD = 5.0V
0.9xVDD
0.7xVDD
VDD
VDD
V
VIL
Input Low Voltage
SDA,SCL,WP,MUP,MDN
VDD = 2.7V
VDD = 5.0V
0.1xVDD
0.3xVDD
V
VOL
Open Drain Output
FAULT#, READY
ISINK = 1mA
0.2
V
VAIH
Address Input High Voltage, VDD = 2.7V, Rpullup≤300kΩ
A2, A1, A0
VDD = 5.0V, Rpullup≤300kΩ
VAIL
Address Input Low Voltage, VDD = 2.7V, Rpulldown≤300kΩ
A2, A1, A0
VDD = 5.0V, Rpulldown≤300kΩ
IAIT
Address Input Tristate
VDD = 2.7V
Maximum Leakage – High Z VDD = 5.0V
0.9xVDD
0.7xVDD
-1.8
-2.0
VDD
VDD
V
0.1xVDD
0.3xVDD
V
+1.4
+1.6
µA
OV/UV Monitor Voltage Range
COMP1 and COMP2 pins
0
VDD
V
VHYST
RPull-Up
COMP1/2 DC Hysteresis
Input Pull-Up Resistors
COMP1 and COMP2 pins,
VTH-VTL (see Note 1)
See Pin Descriptions
10
mV
50
kΩ
Note 1 – The Base DC Hysteresis voltage is measured with a 1.25V external voltage source. The resulting value is determined by subtracting
Threshold Low from Threshold High, VTH-VTL while monitoring the FAULT# pin state. Base DC Hysteresis is measured with a 1.25V input. Actual DC
Hysteresis is derived from the equation: (VIN/VREF)(Base Hysteresis). For example, if VIN=2.5V and VREF=1.25V then Actual DC Hysteresis=
(2.5V/1.25V)(0.003V)=6mV.
Summit Microelectronics, Inc
2075 2.6 05/13/05
5
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