SSF2301A Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.

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производитель

SSF2301A

PWM applications

Silikron Semiconductor Co.,LTD. 

SSF2301A

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

VGS(th)

RDS(ON)

gFS

VDS=VGS,ID=-250μA

VGS=-4.5V, ID=-4A

VGS=-2.5V, ID=-3A

VDS=-5V,ID=-4A

-0.5

-1

V

46

65

mΩ

80 100

7

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Clss

640

PF

Coss

VDS=-10V,VGS=0V,

F=1.0MHz

180

PF

Crss

100

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t d(on)

27

nS

Turn-on Rise Time

Turn-Off Delay Time

tr

VDD=-10V,ID=-1A

60

nS

td(off)

VGS=-4.5V,RGEN=6Ω

30

nS

Turn-Off Fall Time

tf

10

nS

Total Gate Charge

Gate-Source Charge

Qg

9.6

nC

Qgs

VDS=-10V,ID=-4A,VGS=-4.5V

1.5

nC

Gate-Drain Charge

Qgd

2.4

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-1A

-1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

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