STPS20L15D Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STPS20L15D Datasheet PDF : 12 Pages
| |||
Characteristics
STPS20L15
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFSM
PARM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current
TC = 115 °C, DC
Surge non repetitive forward current
tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Storage temperature range
Maximum operating junction temperature (1)
15
30
20
310
970
-65 to +150
125
Unit
V
A
A
A
W
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Junction to case
Table 3: Thermal parameters
Parameter
Max. value
1.6
Unit
°C/W
Symbol
IR(1)
VF(1)
Table 4: Static electrical characteristics
Parameter
Test conditions
Min.
Tj = 25 °C
-
Reverse leakage current
VR = 15 V
Tj = 100 °C
-
Forward voltage drop
IF = 19 A
-
Tj = 25 °C
IF = 40 A
-
IF = 19 A
-
Tj = 125 °C
IF = 40 A
Typ.
200
0.28
0.42
Max.
6
500
0.41
0.52
0.33
0.50
Unit
mA
V
Notes:
(1)Pulse test: tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.18 x IF(AV) + 8.10-3 x IF2(RMS)
2/12
DocID5512 Rev 4
Share Link: 