STS3403 Просмотр технического описания (PDF) - Samhop Mircroelectronics

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производитель

STS3403

P-Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S TS 3403

E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)

P a ra meter

S ymbol

C ondition

Min Typ C Max Unit

5 OFF CHARACTERISTICS

Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30

Zero Gate Voltage Drain C urrent

IDSS

VDS =-24V, VGS =0V

Gate-Body Leakage

ON CHARACTERISTICS b

IGSS

VGS = 20V, VDS= 0V

V

-1 uA

100 nA

Gate Threshold Voltage

V G S (th)

VDS =VGS, ID = -250uA -1 -1.5 -3 V

Drain-S ource On-S tate R esistance R DS(ON)

VGS = -10V, ID =-3A

VGS = -4.5V, ID = -1A

44 65 m-ohm

60 80 m-ohm

On-S tate Drain Current

ID(ON)

VDS = -5V, VGS = -10V 5

A

Forward Transconductance

gFS

DYNAMIC CHARACTERISTICS c

VDS =-5V, ID = - 3A

7

S

Input Capacitance

C IS S

Output Capacitance

COSS

R everse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS c

VDS =-10V, VGS = 0V

f =1.0MHZ

870

PF

290

PF

180

PF

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

VDD = -10V,

tr

ID = -1A,

VGEN = - 4.5V,

tD(O F F )

R GEN = 6 ohm

27

ns

67

ns

35

ns

Fall Time

tf

26

ns

Total Gate C harge

Qg VDS =-10V,ID =-3A,VGS =-4.5V

7.7

nC

Gate-S ource Charge

Gate-Drain C harge

Qgs VDS =-10V, ID = -3A,

Qgd

VGS =-4.5V

1.2

nC

4

nC

2

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