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STTH6012 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STTH6012
Ultrafast recovery - 1200 V diode
STMicroelectronics
STTH6012 Datasheet PDF : 8 Pages
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STTH6012
Characteristics
Figure 9.
V
FP
(V)
25
I
F
=I
F(AV)
T
j
=125°C
20
Transient peak forward voltage
versus dI
F
/dt (typical values)
15
10
5
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
Figure 10. Forward recovery time versus dI
F
/dt
(typical values)
t
fr
(ns)
1400
1200
I
F
=I
F(AV)
V
FR
=1.5 x V
F
max.
T
j
=125°C
1000
800
600
400
200
0
dI
F
/dt(A/µs)
100
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
100
10
1
V
R
(V)
10
100
1000
5/8
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