STW8019A Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

STW8019A

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STMicroelectronics 

Package mechanical data

STw8009/STw8019

9.2

VFBGA 49 balls

Table 29. VFBGA 3x3x1.0 mm - 49 balls - Pitch 0.4 ball 0.25

Dimensions (mm)

Reference

Min

Typ

Max

A(1)

1.00

A1

0.125

A2

0.615

A3

0.18

A4

0.45

b(2)

0.22

0.26

0.30

D

2.95

3.00

3.05

D1

2.40

E

2.95

3.00

3.05

E1

2.40

e

0.40

F

0.30

ddd

eee(3)

fff(4)

0.08

0.13

0.04

1. VFBGA stands for Very thin profile Fine pitch Ball Grid Array.

Very thin profile: 0.80mm<A<=1.00mm/Fine pitch: e<1.00mm

The maximum total package height is calculated by the following methodology

A2Typ

+

A1Typ

+

⎛

⎝

A12 + A32 + A42tolerancevalues⎠⎞

2. The typical ball diameter before mounting is 0.25mm

3. VFBGA with 0.40mm ball pitch is not yet registered in JEDEC publications.

4. The tolerance of position that controls the location of the balls with respect to datum A and B. For each ball

there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect

to datum A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this

tolerance zone.

The tolerance of position that controls the location of the balls within the matrix with respect to each other.

For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position

as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each

tolerance zone fff in the array is contained entirely in the respective zone eee above.

The axis of each ball must lie simultaneaously in both tolerance zones.

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