SUD50N06 Просмотр технического описания (PDF) - Vishay Semiconductors
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SUD50N06 Datasheet PDF : 5 Pages
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New Product
SUD50N06-12
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
100
VGS = 10 thru 6 V
80
80
Transfer Characteristics
60
5V
40
20
0
0
120
100
80
60
4V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = - 55_C
25_C
125_C
40
20
0
0
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
ID - Drain Current (A)
Capacitance
Ciss
Crss
Coss
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
60
40
20
0
0
0.016
TC = 125_C
25_C
- 55_C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.012
0.008
0.004
VGS = 10 V
0.000
0
20
20
40
60
80
100
ID - Drain Current (A)
Gate Charge
16
VDS = 30 V
ID = 50 A
12
8
4
0
0 10 20 30 40 50 60 70 80
Qg - Total Gate Charge (nC)
Document Number: 72385
S-31920—Rev. A, 15-Sep-03
www.vishay.com
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