SUD50N06-07L-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

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SUD50N06-07L-E3

N-Channel 60-V (D-S), 175℃ MOSFET

Vishay Semiconductors 

New Product

SUD50N06-07L

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V(BR)DSS (V)

60

rDS(on) (W)

0.0074 @ VGS = 10 V

0.0088 @ VGS = 4.5 V

ID (A)c

96

88

FEATURES

D TrenchFETr Power MOSFETS

D 175_C Junction Temperature

APPLICATIONS

D Automotive Such As:

− High-Side Switch

− Motor Drives

− 12-V Battery

D Secondary Synchronous Rectification

D

TO-252

GDS

Top View

Drain Connected to Tab

Ordering Information: SUD50N06-07L—E3

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 175_C)

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Repetitive Avalanche Energya

Power Dissipation

Operating Junction and Storage Temperature Range

TC = 25_C

TC = 100_C

L = 0.1 mH

TC = 25_C

VDS

VGS

ID

IDM

IAS

EAS

PD

TJ, Tstg

60

"20

96c

67c

100

45

101

136

−55 to 175

Unit

V

A

mJ

W

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Junction-to-Ambientb

Junction-to-Case

t v 10 sec

Steady State

RthJA

RthJC

Notes:

a. Duty cycle v 1%.

b. Surface mounted on 1” FR4 board.

c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.

Document Number: 72953

S-41133—Rev. A, 07-Jun-04

Typical

15

40

0.85

Maximum

18

50

1.1

Unit

_C/W

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